NSL12AWT1G
Manufacturer:
On Semiconductor
Mfr.Part #:
NSL12AWT1G
Datasheet:
Description:
BJTs SC-70-6 SMD/SMT PNP 650 mW Collector Base Voltage (VCBO):12 V Collector Emitter Voltage (VCEO):12 V Emitter Base Voltage (VEBO):5 V
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -12 V |
| Length | 6.35 mm |
| Width | 6.35 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Height | 6.35 mm |
| Packaging | Reel |
| Halogen Free | Halogen Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Polarity | PNP |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Frequency | 100 MHz |
| Number of Elements | 1 |
| Current Rating | -3 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 450 mW |
| Power Dissipation | 650 mW |
| Max Collector Current | 2 A |
| Collector Emitter Breakdown Voltage | 12 V |
| Transition Frequency | 100 MHz |
| Element Configuration | Single |
| Max Frequency | 100 MHz |
| Collector Emitter Voltage (VCEO) | 12 V |
| Max Breakdown Voltage | 12 V |
| Gain Bandwidth Product | 100 MHz |
| Collector Base Voltage (VCBO) | 12 V |
| Collector Emitter Saturation Voltage | -170 mV |
| Emitter Base Voltage (VEBO) | 5 V |
| hFE Min | 100 |
| Schedule B | 8541210080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Max Cutoff Collector Current | 100 nA |
| Transistor Type | PNP |
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